The dissertation deals with the development of monolithically integrated driver circuits in silicon-bipolar technology for laser modulation in ultra-high-speed optical-fiber systems. A laser diode and modulator driver for 10-Gb/s-systems, a 20-Gb/s
modulator driver, and a novel circuit for driving an electroabsorption modulator (EAM) in a 40-Gbit/s-system were developed, realized and characterized. When compared to circuits in III-V compound semiconductor technologies the performance of the realized
silicon drivers is of equal value, in part even better. Without exception all circuits held worldwide records for silicon-based bipolar technologies at the time of publication of the dissertation. Special design problems of such circuits - e.g. shaping of
pulsform, high-current effects, transistor breakdown, stability, and on-chip temperature - together with adequate solutions are discussed in detail.