For the first time, the plateau width of the quantum Hall resistance in dependence of the electron mobility in a two dimensional electron gas was systematically investigated. All other parameters, like temperature and electron density were kept
constant. For this, the electron mobility of a high mobility GaAs/AlxGa1-xAs-Heterostructure was decreased successively using 10 keV
ion implantation with focused ion beam technique. The study of the Hall resistance plateau width on samples with an electron mobility range over three orders of magnitude has been carried out.
The validity of the resistivity law proposed by A. M. Chang and D. C. Tsui was determined for deep temperatures and an alternative solution is given for the limit B -> 0.
Excepting the homogeneous implantation two different patterns were investigated, as well. An implantation of 10 micrometer wide stripes perpendicular to the Hall-bar and an implantation of the Hall-bar edges.